X2816C Datasheet, PDF (9/16 Pages) Xicor Inc. – 5 Volt, Byte Alterable E2PROM

X2816C
CE Controlled Write Cycle
ADDRESS
CE
OE
WE
DATA IN
tAS
tOES
tCS
tDV
DATA OUT
tWC
tAH
tCW
tOEH
tCH
DATA VALID
tDS
tDH
HIGH Z
Page Mode Write Cycle
OE ⁽⁶⁾
3852 FHD F06
CE
WE
ADDR. * ⁽⁷⁾
tWP
tBLC
tWPH
I/O
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
*For each successive write within the page write operation, A4–A10 should be the same or
writes to an unknown address could occur.
LAST BYTE
BYTE n+2
tWC
3852 FHD F07
Notes: (6) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE
HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively
performing a polling operation.
(7) The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform
to either the CE or WE controlled write cycle timing.
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