X28HT010 Datasheet, PDF (8/13 Pages) Xicor Inc. – High Temperature, 5 Volt, Byte Alterable E2PROM

X28HT010
CE Controlled Write Cycle
ADDRESS
CE
OE
WE
DATA IN
DATA OUT
tAS
tOES
tCS
tDV
tAH
tCW
tWC
tWPH
tOEH
tCH
DATA VALID
tDS
tDH
HIGH Z
6613 FHD F07
Page Write Cycle
OE ⁽⁵⁾
CE
WE
ADDRESS * ⁽⁶⁾
tWP
tBLC
tWPH
I/O
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
*For each successive write within the page write operation, A8–A16 should be the same or
writes to an unknown address could occur.
LAST BYTE
BYTE n+2
tWC
6613 FHD F08
Notes: (5) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE
HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively
performing a polling operation.
(6) The timings shown above are unique to page write operations. Individual byte load operations within the page write must
conform to either the CE or WE controlled write cycle timing.
8