X28HT010 Datasheet, PDF (1/13 Pages) Xicor Inc. – High Temperature, 5 Volt, Byte Alterable E2PROM

X28HT010
1M
X28HT010
128K x 8 Bit
High Temperature, 5 Volt, Byte Alterable E²PROM
FEATURES
• 175°C Full Functionality
• Simple Byte and Page Write
—Single 5V Supply
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
• Highly Reliable Direct Write™ Cell
—Endurance: 10,000 Write Cycles
—Data Retention: 100 Years
—Higher Temperature Functionality is Possible
by Operating in the Byte Mode.
DESCRIPTION
The Xicor X28HT010 is a 128K x 8 E²PROM, fabricated
with Xicor's proprietary, high performance, floating gate
CMOS technology which provides Xicor products supe-
rior high temperature performance characteristics. Like
all Xicor programmable non-volatile memories the
X28HT010 is a 5V only device. The X28HT010 features
the JEDEC approved pinout for byte-wide memories,
compatible with industry standard EPROMs.
The X28HT010 supports a 256-byte page write opera-
tion, effectively providing a 19µs/byte write cycle and
enabling the entire memory to be typically written in less
than 2.5 seconds.
Xicor E²PROMs are designed and tested for applica-
tions requiring extended endurance. Data retention is
specified to be greater than 100 years.
PIN CONFIGURATIONS
VBB
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
FLAT PACK
CERDIP
SOIC (R)
1
32
2
31
3
30
4
29
5
28
6
27
7
26
8
25
X28HT010
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
6613 FHD F02
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
6613-1.5 8/5/97 T2/C0/D0 EW
1
PGA
I/O0 I/O2 I/O3 I/O5 I/O6
15
17
19
21
22
A1
A0
I/O1 VSS I/O4 I/O7 CE
13
14
16
18
20
23
24
A2
A3
12
11
A10 OE
25
26
A4
A5
X28HT010
A11 A9
10
9
27
28
(BOTTOM VIEW)
A6
A7
8
7
A8
A13
29
30
A12 A15 ^NC VCC NC ^NC A14
6
5
2
36
34
32
31
A16 VBB NC WE NC
4
3
1
35 33
6613 FHD F21
Characteristics subject to change without notice