X84256 Datasheet, PDF (5/15 Pages) Xicor Inc. – UPort Saver EEPROM

X84256
Preliminary
—Write ‘1’—when reading data
—Read/Read/Write ‘1’—after data is written to device,
but before entering the NV write sequence.
—the device powers-up;
—a nonvolatile write operation completes.
While a sequential read is in progress, the device remains
in an active state. This state draws more current than the
idle state, but not as much as during a read itself. To go
back to the lowest power condition, an invalid condition is
created by writing a ‘1’ after the last bit of a read operation.
Write Protection
The following circuitry has been included to prevent
inadvertent nonvolatile writes:
—A special “start nonvolatile write” command sequence
is required to start a nonvolatile write cycle.
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias ...................... –65°C to +135°C
Storage Temperature ........................... –65°C to +150°C
Terminal Voltage with
Respect to V_SS .......................................–1V to +7V
DC Output Current................................................... 5mA
Lead Temperature (Soldering, 10 seconds)..........300°C
RECOMMENDED OPERATING CONDITIONS
Temperature
Commercial
Industrial
Military†
Min.
0°C
–40°C
–55°C
Max.
+70°C
+85°C
+125°C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation
of the device at these or any other conditions above
those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Supply Voltage
X84256
X84256 – 2.5
X84256 – 1.8
Limits
5V ±10%
2.5V to 5.5V
1.8V to 3.6V
D.C. OPERATING CHARACTERISTICS (V_CC = 5V ±10%)
(Over the recommended operating conditions, unless otherwise specified.)
Symbol
Parameter
Limits
Min.
Max.
Units
Test Conditions
I_CC1
V_CC Supply Current (Read)
I_CC2
I_SB1
I_LI
I_LO
V_lL ⁽¹⁾
V_IH ⁽¹⁾
V_OL
V_OH
V_CC Supply Current (Write)
V_CC Standby Current
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
1
3
–0.5
V_CC x 0.7
V_CC – 0.8
1
10
10
V_CC x 0.3
V_CC + 0.5
0.4
mA OE = V_IL, WE = V_IH,
I/O = Open, CE clocking @ 10MHz
mA
I_CC During Nonvolatile Write Cycle
All Inputs at CMOS Levels
µA CE = V_CC, Other Inputs = V_CC or V_SS
µA V_IN = V_SS to V_CC
µA V_OUT = V_SS to V_CC
V
V
V I_OL = 2.1mA
V I_OH = –1mA
Notes: (1) V_IL Min. and V_IH Max. are for reference only and are not tested.
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