EFS1J Datasheet, PDF (2/4 Pages) Won-Top Electronics – 1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

1.00
0.75
0.50
0.25
Single phase half wave
Resistive or Inductive load
0
0
30
25 50 75 100 125 150 175
T_L, LEAD TEMPERATURE ( ° C)
Fig. 1 Forward Current Derating Curve
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
T_j = 25°C
10
Pulse width = 300µs
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
T_j = 25°C
f = 1.0MHz
10
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
50Ω NI (Non-inductive)
10Ω NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0Ω
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t_rr
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
EFS1J
2 of 4
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