EFS1J Datasheet, PDF (1/4 Pages) Won-Top Electronics – 1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

WTE
POWER SEMICONDUCTORS
EFS1J ^Pb
1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
B
! Low Forward Voltage Drop, High Efficiency
! Surge Overload Rating to 30A Peak
D
! Low Power Loss
A
! Super-Fast Recovery Time
F
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
HG





















































































E
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
SMA/DO-214AC
Dim
Min
Max
A
2.50
2.90
B
4.00
4.60
C
1.20
1.60
D
0.152
0.305
E
4.80
5.28
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T_L = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
@I_F = 1.0A
@T_A = 25°C
@T_A = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
trr
Cj
R
JL
Tj, TSTG
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
EFS1J
600
420
1.0
30
1.25
5.0
100
50
8
35
-65 to +150
Unit
V
V
A
A
V
µA
nS
pF
°C/W
°C
EFS1J
1 of 4
© 2006 Won-Top Electronics