FH101_07 Datasheet, PDF (1/7 Pages) WJ Communication. Inc. – High Dynamic Range FET

FH101
High Dynamic Range FET
Product Features
Product Description
Functional Diagram
x 50 – 4000 MHz
x Low Noise Figure
x 18 dB Gain
x +36 dBm OIP3
x +18 dBm P1dB
x Single or Dual Supply Operation
x Lead-free/Green/RoHS-compliant
SOT-89 Package
x MTTF > 100 years
Applications
x Mobile Infrastructure
x CATV / DBS
x W-LAN / ISM
x Defense / Homeland Security
The FH101 is a high dynamic range FET packaged in a
low-cost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The device combines dependable performance with superb
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85qC. The FH101 is available
in the environmentally-friendly lead-free/green/RoHS-
compliant SOT-89 package.
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH101 will
work for other applications within the 50 to 4000 MHz
frequency range such as fixed wireless.
4
1
2
3
Function
Gate
Drain
Source
Pin No.
1
3
2, 4
Specifications ⁽¹⁾
DC Electrical Parameter
Saturated Drain Current, Idss ⁽²⁾
Transconductance, Gm
Pinch-off Voltage, Vp ⁽³⁾
Units
mA
mS
V
Min
100
-3
Typ
140
120
-1.5
Max
170
RF Parameter
Operational Bandwidth
Test Frequency
Small-signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3 ⁽⁴⁾
P1dB
Minimum Noise Figure ⁽⁵⁾
Drain Bias
Gate Bias
Units
MHz
MHz
dB
dB
dBm
dBm
dB
V
V
Min Typ Max
50 – 4000
800
17
18
23
+32 +36
+18
0.77
+5
0
1. DC and RF parameters are measured under the following conditions unless otherwise noted:
q : 25 C with Vds = 5V, Vgs = 0V, in a 50 system.
2. Idss is measured with Vgs = 0V.
3. Pinch-off voltage is measured with Ids = 0.6 mA.
4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The minimum noise figure has .S = .L = .OPT.
Typical Performance ⁽⁶⁾
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3 ⁽⁴⁾
Noise Figure
Drain Bias
Gate Voltage
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
Typical
900 1960 2140
19
16.5 16.5
-11
-20
-22
-10
-9
-9
+18.8 +18.1 +19.1
+36
+36
+36
2.7
3.1
3.0
5V @ 140mA
0
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect
performance in an appropriate application circuit.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Gate Current
RF Input Power (continuous)
Junction Temperature
Rating
-40 to +85 qC
-55 to +150 qC
+7 V
-6 V
4.5 mA
4 dB above Input P1dB
+220 qC
Ordering Information
Part No.
FH101-G
Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
x x x x WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: [phone] e-mail: [e-mail] Web site: www.wj.com
Page 1 of 7 April 2007