WCF12C60 Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

WCF12C60
Electrical Characteristics (TC=25℃,unless otherwise noted)
Symbol
Parameter
Test Conditions
IDRM
Repetitive Peak Off-State
Current
VAK=VDRM
TC=25℃
TC=125℃
Value
Units
Min Typ Max
-
-
10
μA
-
-
200 μA
VTM
Peak On-State Voltage (1)
ITM=20A, tp=380㎲
-
1.4 1.7
V
IGT
Gate Trigger Current (2)
VAK=6V(DC),RL=10Ω
-
-
TC=25℃
VGT
Gate Trigger Voltage (2)
VD=6V(DC),RL=10Ω
-
-
TC=25℃
VGD
Non-Trigger Gate Voltage (1)
VAK=12V,RL=100Ω TC=125℃ 0.2
-
Linear slope up to VD=67%
Critical Rate of Rise Off-State
dv/dt
VDRM, gate open
200
-
Voltage
TJ=125℃
IH
Holding Current
IT=100mA, Gate Open
-
-
TC=25℃
15
mA
1.5
V
-
V
-
V/㎲
20
mA
*Notes:
1 Pulse Width ≤1.0ms,Duty cycle≤1%
2 RGK Current is not Included in measurement.
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