WCF12C60 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

Features
� Repetitive Peak Off-State Voltage:600V
� R.M.S On-State Current (IT(RMS)=12A)
� Low On-State Voltage(1.4V(Typ.)@ITM)
� Isolation Voltage(VISO=1500V AC)
WCF12C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for the
application where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control circuit in
power tool, inrush current limit circuit and heating control system.
By using an internal ceramic pad, the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
IT(AV)
IT(RMS)
ITSM
I²t
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge on-state Current
I²t for Fusing
Condition
Half Sine Wave:TC =78 °C
180°conduction Angle
1/2 Cycle,60Hz,Sine
Wave Non-Repetitive
t=8.3ms
di/dt
Critical rate of rise of on-state current
PGM
Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power Dissipation Over any period
IFGM
VRGM
VISO
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
A.C.1minute
Value
600
7.6
12
120
72
50
5
0.5
2
5.0
1500
-40~125
-40~150
Units
V
A
A
A
A²s
A/㎲
W
W
A
V
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
Min Typ
-
-
-
-
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Max
3.8
60
Units
℃/W
℃/W