WCD6C60S Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Sensitive Gate Silicon Controlled Rectifiers

Electrical Characteristics (TC=25℃ unless otherwise noted)
WCD6C60S
Symbol
IDRM
Parameter
Repetitive Peak Off-State Current
Test Conditions
VAK=VDRM
TC=25℃
TC=125℃
Value
Units
Min Typ Max
-
-
10
μA
-
-
200 μA
VTM
Peak On-State Voltage (1)
ITM=9A, tp=380㎲
-
-
1.6
V
IGT
VGT
VGD
dv/dt
IH
IL
Gate Trigger Current (2)
VAK=6V(DC),RL=10Ω
-
-
TC=125℃
Gate Trigger Voltage (2)
VD=6V(DC),RL=10Ω
-
-
TC=125℃
Non-Trigger Gate Voltage (1)
VAK=12V,RL=100Ω TC=125℃ 0.2
Linear slope up to
Critical Rate of Rise Off-State
VD=67%VDRM, gate open
200
-
Voltage
TJ=125℃
Holding Current
IT=100mA, Gate open
-
-
TC=25℃
0.2 mA
1.5
V
V
-
V/㎲
20
mA
Latching Current
IG=1.2 IGT
-
50
-
mA
*Notes:
1.Pulse Width ≤1.0ms,Duty cycle≤1%
2.RGK Current not Included in measurement.
2/5
Steady, keep you advance