WCD6C60S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Sensitive Gate Silicon Controlled Rectifiers

Features
� Repetitive Peak Off-State Voltage : 600V
� R.M.S On-State Current ( IT(RMS)= 6 A )
� Low On-State Voltage (1.6V(Max.) @ ITM)
WCD6C60S
Sensitive Gate
Silicon Controlled Rectifiers
General Description
Sensitive gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current(180°
Conduction Angle)
Tc =110 °C
IT(RMS)
R.M.S On-State Current(180°
Conduction Angle)
Tc =110 °C
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine
WaveNon-Repetitive
I²t
I²t for Fusing
t =10ms
di/dt
Critical rate of rise of on-state current F=60Hz,Tj=125 °C
PGM
Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power
Dissipation
Tj=125 °C
IFGM
VRGM
Forward Peak Gate Current
Reverse Peak Gate Voltage
TJ
Operating Junction Temperature
TSTG
Storage Temperature
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case(DC)
RθJA
Thermal Resistance Junction to Ambient(DC)
Ratings Units
600
V
3.8
A
6
A
66
A
21
A²s
50
A/㎲
5
W
0.5
W
2
A
5.0
V
-40~125 °C °C
-40~150 °C °C
Value
3.12
89
Units
℃/W
℃/W
Rev.A Sep.2010
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