WCD4C60S Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

WCD4C60S
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
IDRM
Repetitive Peak Off-State Current
Test Conditions
VAK=VDRM RGK=1KΩ
Value
Units
Min Typ Max
-
-
5
μA
-
-
1
mA
VTM
Peak On-State Voltage (1)
ITM=8A, tp=380㎲
-
-
1.8
V
IGT
VGT
VGD
dv/dt
Gate Trigger Current (2)
Gate Trigger Voltage (2)
VD=12V,RL=140
20
-
80
μA
-
-
0.8
V
Non-Trigger Gate Voltage (1)
VD=12V,RL=3.3KΩ, RGK=1 KΩ ^0.1
Critical Rate of Rise Off-State Voltage VD=67%VDRM, RGK=1 KΩ
15
-
V
-
V/㎲
IH
Holding Current
IL
Latching Current
IT=50mA, RGK=1 KΩ
IT=1mA, RGK=1 KΩ
-
-
5
mA
6
-
-
mA
Rd
Dynamic resistance
Tj=125°C
-
-
100
mΩ
Note:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement