WCD4C60S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

WCD4C60S
Silicon Controlled Rectifiers
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ ITM)
General Description
Sensitive gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Ti =60 °C
IT(AV)
Conduction Angle)
Tamb=25 °C
IT(RMS)
R.M.S On-State Current(180°
Conduction Angle)
Ti =60 °C
Tamb=25 °C
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I²t
I²t for Fusing
t =10ms
di/dt
Critical rate of rise of on-state current
F=60Hz,Tj=125 °C
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Dissipation
Tj=125 °C
IFGM
Forward Peak Gate Current
TJ
Operating Junction Temperature
TSTG
Storage Temperature
Ratings
600
1.35
0.9
4
1.35
33
4.5
50
0.5
0.2
1.2A
-40~125 °C
-40~150 °C
Units
V
A
A
A
A²s
A/㎲
W
W
A
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case(DC)
RθJA
Thermal Resistance Junction to Ambient(DC)
Jan 2009 .Rev .0
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
15
100
Units
℃/W
℃/W