WBW3320 Datasheet, PDF (2/6 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High VoltageFast-Switching NPN Power Transistor

Electrical Characteristics (T_C=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
V_CEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
V CE(sat)
Collector-Emitter Saturation Voltage
Ic=10A,Ib= 2A
Ic=12A,Ib= 2.4A
Tc=100℃
V_BE(sat) Base-Emitter Saturation Voltage
I_EBO
Emitter-Base Cutoff Current
I_cBO
Collector-Base Cutoff Current
I_{CE O}
Collector-Emitter Cutoff Current
h_FE
DC Current Gain
ts
Storage Time
tf
Fall Time
f_T
Current Gain Band with Prouct
Ic=10A,Ib= 2A
Ic=12A,Ib= 2.4A
Tc=100℃
Veb=9V,Ic=0V
Vcb=500V,Ie=0V
Vc e=400V,I b=0V
Vce=5V, Ic=6A
Vce=5V, Ic=10A
V_CC=24V , Ic=6A
IB1=-IB2=1.2A
(UI9600)
Vce=10V, Ic=0.5A
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
WBW3320
V alue
Units
Min Typ Max
400 -
-
V
-
- 1.0 V
-
- 2.0 V
-
- 1.5 V
-
- 1.8 V
-
-
10 µA
-
- 100 µA
50 µA
10 -
45
8-
-
-
3
㎲
0.7
4
MHz
2 /6
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