WBW3320 Datasheet, PDF (1/6 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High VoltageFast-Switching NPN Power Transistor

WBW3320
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
TO3P
WBW3320
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
I_BM
P_C
T_J
T_{ST G}
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V_BE = 0
I_B = 0
I_C = 0
t_P = 5ms
TO247
WBW3320W
Value
Units
500
V
400
V
9
V
15
A
30
A
7
A
14
A
120
W
150
℃
-55 ~ 150
℃
Thermal Characteristics
Sym bol
Parameter
R_θJc
Thermal Resistance Junction to Case
R_θJA
Thermal Resistance Junction to Ambient
Value
1.05
62.5
Units
℃/W
℃/W
Rev.A Jul.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right r eserved.
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