WBR13005D1 Datasheet, PDF (2/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBR13005D1
Electrical Characteristics (T_C=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Colletor Cut-off Current
ICEV
( VBE = -1.5V )
VCE = 700V
V_CE = 700V ,T_C = 100℃
Value
Units
Min Typ Max
- - 1.0
mA
- - 5.0
VCEO(SUS) Collector-Emitter Sustaining Voltage IB = 0, IC = 10mA
400 -
-
V
VCE(sat)
V_BE(sat)
h_FE
ts
tf
f_T
VF
C_OB
Collector-Emitter Saturation Voltage
I_C =1.0A, I_B = 0.2A
IC = 2.0A, IB = 0.5A
I_C = 4.0A, I_B = 1.0A
Base-Emitter Saturation Voltage
I_C =1.0A, I_B = 0.2A
I_C = 2.0A, I_B = 0.5A
DC Current Gain
I_C = 1.0A, VCE = 5V
IC = 2.0A, VCE = 5V
Storage Time
Fall Time
Current Gain Bandwidth Product
Diode Forward Voltage
Output Capacitance
IC = 2.0A, VCC = 125V
I_B1 = 0.4A, I_B2 = -0.4A
T_P = 25us
IC=0.5A ,VCE=10V
I_F=2A
I_C=0.5A ,V_CE=10V
0.5
- - 0.6 V
1.0
1.2
--
V
1.6
10
40
10
30
-
3.6
-
㎲
1.6
4-
- MHz
-
- 2.5
V
- 6.5
pF
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/4
.
Steady, keep you advance