WBR13005D1 Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBR13005D1
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ Minimum Lot-to-Lot hFE Variation
■ Wide Reverse Bias SOA
■ Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Paramete
VCES
Collector-Emitter V^roltage
VCEO
V_EBO
I_C
I_CP
I_B
I_BM
P_C
T_J
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
Operation Junction Temperature
T_STG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
I_C = 0
tP = 5ms
Value
700
400
9.0
4.0
8.0
2.0
4.0
40
1.8
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance Junction to Case
R_θJA
Thermal Resistance Junction to Ambient
Value
1.67
62.5
Units
℃/W
℃/W
Jan 2012. Rev. 0
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