WBR13003LD Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBR13003LD
Electrical Characteristics (T_C=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
BV_CBO
Collector-Base Breakdown Voltage
Ic=0.5mA,Ie=0
Value
Units
Min Typ Max
400
V
BV_CEO
Collector-Emitter Breakdown Voltage
Ic=10mA,Ib=0
200 -
-
V
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(sat)
I_CBO
I_CEO
I_EBO
h_FE
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter- Base Cutoff Current
DC Current Gain
ts
tf
VFSD
Storage Time
Fall Time
Ic=100mA,Ib=20mA
Ic=100mA,Ib=20mA
Vcb=350V,Ie=0mA
Vce=200V,Ib=0mA
Veb=9V,Ic=0mA
Vce=5V,Ic=200mA
Vce=5V, Ic=1mA
V_CC=250V
I_C=5 I_B
I_B1=- I_B2=0.04A
-
- 0.5
V
-
- 1.0
V
-
- 100 μA
-
- 200 μA
-
-
20
μA
10
-
40
8
-
-
2
-
4
㎲
-
- 0.8
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
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