WBR13003LD Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBR13003LD
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ High Voltage Capability
◆ Wide Soa
◆ Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
ystem, switching mode power supply.
Absolute Maximum Ratings(Tc = 25°C)
Symbol
Parameter
Test Conditions
V_CES
V_CEO
V_EBO
I_C
I_CP
P_C
T_J
T_STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Total Dissipation at Tc = 25℃
Operation Junction Temperature
Storage Temperature
V_BE = 0
I_B = 0
I_C = 0
Value
400
200
9.0
1.2
3.0
10
150
- 40 ~ 150
Units
V
V
V
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
R_θJc
Thermal Resistance Junction to Case
R_θJA
Thermal Resistance Junction to Ambient
Value
3.12
89
Units
℃/W
℃/W
Jan 2009. Rev. 0
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