WBR13003D1 Datasheet, PDF (2/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBR13003D1
Electrical Characteristics (Tc = 25°C)
Symbol
Parameter
Test Conditions
Min
BVCBO
Collector-Base Breakdown Voltage
Ic=1mA,Ib=0
700
BVCEO
Collector-Base Breakdown Voltage
Ic=10mA,Ib=0
400
VCE(sat)
Collector-Emitter Saturation Voltage Ic=200mA,Ib=100mA
-
VBE(sat)
Base-Emitter Saturation Voltage
Ic=200mA,Ib=100mA
-
ICBO
Collector-Base Cutoff Current
Vcb=600V,Ie=0mA
-
ICEO
Collector-Emitter Cutoff Current
Vce=400V,Ib=0mA
-
IEBO
Emitter- Base Cutoff Current
Veb=9V,Ic=0mA
-
hFE
DC Current Gain
Vce=20V,Ic=20mA
10
Vce=5V, Ic=1mA
9
tr
Rise Time
ts
Storage Time
tf
Fall Time
-
3
IC=0.1A
-
Value
Typ
-
-
-
-
-
-
Units
Max
V
-
V
1.6
V
1.2
V
0.1
mA
0.1
mA
0.1
mA
-
40
-
-
-
1
-
5
㎲
1
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
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