WBR13003D1 Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBR13003D1
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
◆ Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICP
Collector pulse Current
IB
Base Current
IBM
Base Peak Current
PC
Total Dissipation at Tc = 25℃
TJ
Operation Junction emperature
TSTG
Storage Temperature
Test Conditions
VBE = 0
IC = 1mA
IE= 0.1mA
tP = 5ms
Value
700
400
9
1.5
3.0
0.75
1.5
20
150
-55 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
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