WBN13003B2D Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast -Switching NPN Power Transistor

WBN13003B2D
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus)
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Value
Min Typ Max
400 -
-
Units
V
VCE(sat)
Collector -Emitter Saturation Voltage Ic=0.2A,Ib=40mA
-
-
0.3
V
VBE(sat)
Base -Emitter Saturation Voltage
Ic=0.2A,Ib=40mA
-
-
1.2
V
ICBO
Collector -Base Cutoff Current
Vcb=600V Ie=0
-
-
0.1
mA
ICEO
Collector -EmitterCutoff Current
Vce=400V Ib=0
-
- 0.25 mA
IEBO
Emitter -Base Cutoff Current
Veb=7V Ic=0
-
-
0.1
mA
hFE
DC Current Gain
fT
Characteristic frequency
ton
Turn -on Time
ts
Storage Time
tf
Fall Time
VF
Diode Forward Voltage
Vce=10V,Ic=10mA
Vce=10V Ic=50mA
F=1MHz
Vcc=5V, Ic=0.25A
IF=0.6A
10
-
30
5
-
-
0.2 1.0
1.5
-
4.0
0.15 0.4
1.8
MHz
µs
V
Note :
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
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