WBN13003B2D Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast -Switching NPN Power Transistor

WBN13003B2D
High Voltage Fast -Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
■ Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed switching
characteristics required such as lighting system,switching mode
power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Collector -Emitter Voltage
Collector -Emitter voltage
Emitter-Bade Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE=0
IB=0
IC=0
tP=5ms
Value
600
400
9.0
1.2
2.4
0.75
1.5
20
-40~150
-40~150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RÓ¨JC
RÓ¨JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
6.25
89
Units
℃/W
℃/W
Rev.A Mar.2011
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