WBN13003A1 Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBN13003A1
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
BVCBO Collector-Base Breakdown Voltage Ic=10mA,Ie=0
600
Value
Typ
Units
Max
V
BVCEO Collector-Base Breakdown Voltage Ic=10mA,Ib=0
400
-
-
V
VCE(sat) Collector-Emitter Saturation Voltage Ic=500mA,Ib=100mA
-
-
0.8
V
VBE(sat) Base-Emitter Saturation Voltage
Ic=500mA,Ib=100mA
-
-
1.2
V
ICBO
Collector-Base Cutoff Current
Vcb=600V,Ie=0mA
-
-
5
µA
ICEO
Collector-Emitter Cutoff Current
Vce=400V,Ib=0mA
-
-
10
µA
IEBO
Emitter- Base Cutoff Current
hFE
DC Current Gain
Veb=9V,Ic=0mA
-
-
Vce=20V,Ic=20mA
10
-
Vce=5V, Ic=1mA
9
-
5
µA
40
-
ts
Storage Time
tf
Fall Time
Vcc=24V
Ic=5IB
IB1 =-IB2=0.05A
-
-
4
㎲
-
-
0.7
fT
Characteristic frequency
VCE=10V,IC=0.1A
4
-
-
MHz
Note:
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
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