WBN13003A1 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBN13003A1
High Voltage Fast-Switching NPN Power Transistor
Features
� Very High Switching Speed
� High Voltage Capability
� Wide Reverse Bias SOA
General Description
This Device is designed for high voltage , High speed
switching Characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter voltage
VEBO
Emitter -Base voltage
IC
Collector Current
ICP
Collector pulse Current
IB
Base Current
IBM
Base Peak Current
PC
Total Dissipation at Tc=25℃
TJ
Operation Junction Temperature
TSTG
Storage Temperature
Test Conditions
VBE=0
IB=0
IC=0
tP=5ms
Value
600
400
9.0
1.2
2.4
0.75
1.5
18
-40~150
-40~150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJc
Thermal Resistance Junction to Case
RQJA
Thermal Resistance Junction to Ambient
Value
6.9
89
Units
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.