WBN13002 Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

Electrical Characteristics (TC=25℃ unless otherwise noted)
WBN13002
Symbol
Parameter
BV_CBO
Collector-Base Breakdown Voltage
Value
Test Conditions
Units
Min Typ Max
Ic=0.5mA,Ie=0
600
V
BV_CEO
Collector-Emitter Breakdown Voltage
Ic=10mA,Ib=0
400 -
-
V
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(sat)
I_CBO
I_CEO
I_EBO
hFE
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter- Base Cutoff Current
DC Current Gain
ts
Storage Time
tf
Fall Time
Ic=200mA,Ib=100mA
Ic=200mA,Ib=100mA
Vcb=550V,Ie=0mA
Vce=400V,Ib=0mA
Veb=9V,Ic=0mA
Vce=20V,Ic=20mA
Vce=5V, Ic=1mA
VCC=250V
IC=5 IB
IB1=- IB2=0.04A
-
- 1.6
V
-
- 1.2
V
-
- 10 ^μA
-
- 20 ^μA
-
- 20 ^μA
10
40
9
2
-
-
㎲
-
- 0.8
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
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