WBN13002 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

WBN13002
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed switching
characteristics required such as lighting system, switching mode
power supply.
Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
I_BM
P_C
T_J
T_STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
Operation Junction Temperature
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
V_BE = 0
I_B = 0
I_C = 0
t_P = 5ms
Value
600
400
9.0
1.0
2.5
-
-
12
0.8
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Rev.A Mar.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.