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| WBD13003D Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – HighVoltageFast-SwitchingNPNPowerTransistor | |||
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WBD13003D
Electrical Characteristics(Tc=25â unless otherwise noted)
Symbol
Parameter
IEBO
VCEO(SUS)
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
VCE(sat)
Collector -Emitter Saturation Voltage
Test Conditions Min
VBE=9V
-
IB=0,IC=10mA
400
IC=1.0A,IB=0.2A
IC=2.0A,IB=0.5A
-
IC=4.0A,IB=1.0A
Value
Typ Max
-
20
-
-
0.5
-
0.6
1.0
Units
µA
V
V
VBE(sat)
hFE
ts
tf
fT
VF
COB
Base -Emitter Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Current Gain Bandwidth Product
Diode Forward Voltage
Output Capacitance
IC=1.0A,IB=0.2A
IC=2.0A,IB=0.5A
IC=500A,VCE=5V
IC=1mA,VCE=5V
IC=0.5A,VCC=5V
(UI9600A)
IC=0.5A,VCE=10V
IF=2A
IC=0.5A,VCB=10V
-
-
1.2
V
1.6
10
-
40
9
-
-
-
4
0.8
µs
4
-
-
-
-
21
-
MHz
2
V
pF
Note:
Pulse Test :Pulse width 300, Duty cycle 2%
2/5
Steady, keep you advance
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