WBD13003D Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – HighVoltageFast-SwitchingNPNPowerTransistor

WBD13003D
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
■ Built-in free wheeling diode
symbol
2.Collector
1.Base
3.Em itter
General Description
This Device is designed for high Voltage ,High speed
switching Characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICP
Collector pulse Current
IB
Base Current
IBM
Base peak Current
PC
Total Dissipation at Tc*=25℃
TJ
Operation Junction Temperature
TSTG
Storage Temperature
Test conditions
VBE=0
IB=0
IC=0
tP=5ms
Value
600
400
9.0
2
3.0
0.75
1.5
10
150
-55~150
Units
V
V
V
A
A
A
A
W
℃
℃
Tc :Case temperature (good cooling)
Ta :Ambient temperature (without heat sink)
Thermal characteristics
Symbol
Parameter
RÓ¨JC
Thermal Resistance Junction to Case
RÓ¨JA
Thermal Resistance Junction to Ambient
Value
12.5
8.9
Units
℃/W
℃/W
Rev.A Apr.2012
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