SCU4C60S Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

SCU4C60S
Electrical Characteristics (T_C=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
I_DRM
Repetitive Peak Off-State Current
VAK=VDRM RGK=1KΩ
V_TM
I_GT
V_GT
V_GD
dv/dt
I_H
I_L
R_d
Peak On-State Voltage (1)
Gate Trigger Current (2)
Gate Trigger Voltage (2)
ITM=8A, tp=380㎲
VD=12V,RL=140
Non-Trigger Gate Voltage (1)
VD=12V,RL=3.3KΩ, RGK=1 KΩ
Critical Rate of Rise Off-State Voltage
Holding Current
Latching Current
VD=67%V_DRM, RGK=1 KΩ
IT=50mA, RGK=1 KΩ
IT=1mA, RGK=1 KΩ
Dynamic resistance
Tj=125°C
Value
Units
Min Typ Max
-
-
5
μA
-
-
1
mA
-
- 1.8
V
20 - 50
μA
-
- 0.8
V
0.1
V
15 -
-
V/㎲
-
-
5
mA
6
-
-
mA
-
- 100 mΩ
Note:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. R_GK Current not Included in measurement
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