SCU4C60S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

SCU4C60S
Silicon Controlled Rectifiers
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ I_TM)
G
A
K
General Description
Sensitive gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control circuit
in power tool, inrush current limit circuit and heating control
system.
K
A
G
TO251
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
V_DRM
I_T(AV)
I_T(RMS)
I_TSM
I²t
di/dt
P_GM
P_G(AV)
I_FGM
T_J
T_STG
ConditionParameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
R.M.S On-State Current(180°
Conduction Angle)
Surge On-State Current
I²t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Dissipation
Forward Peak Gate Current
Operating Junction Temperature
Storage Temperature
Condition
Ti =60 °C
Tamb=25 °C
Ti =60 °C
Tamb=25 °C
1/2 Cycle, 60Hz, Sine
Wave
Non-Repetitive
t =10ms
F=60Hz,Tj=125 °C
Tj=125 °C
Ratings
600
1.35
0.9
4
1.35
Units
V
A
A
33
A
4.5
50
0.5
0.2
1.2A
-40-125 °C
-40-150 °C
A²s
A/㎲
W
W
A
°C
°C
Thermal Characteristics
Symbol
Parameter
R_θJc
Thermal Resistance Junction to Case(DC)
R_θJA
Thermal Resistance Junction to Ambient(DC)
Value
15
100
Units
℃/W
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
1/5