SBP13007-X Datasheet, PDF(2/5 Page) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

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SBP13007-X Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

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SBP13007-X

Electrical Characteristics (TC=25â unless otherwise noted)

Symbol

Parameter

VCEO(sus) Collector-Emitter Breakdown Voltage

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

ICBO

Base-Emitter Saturation Voltage

Collector-Base Cutoff Current

(Vbe=-1.5V)

hFE

DC Current Gain

Resistive Load

Storage Time

Fall Time

Inductive Load

Storage Time

Fall Time

Inductive Load

Storage Time

Fall Time

Test Conditions

Ic=10mA,Ib=0

Ic=5.0A,Ib=1.0A

Ic=8.0A,Ib=1.6A

Ic=12A,Ib=3.0A

I Ic=5.0A,Ib=1.0A

Ic=8.0A,Ib=1.6A

Vcb=600V

Value

Units

Min Typ Max

400 -

1.0

- 1.5 V

3.0

1.2

1.6

- 100 nA

Vce=5V,Ic=5.0A

Vce=5V, Ic=8.0A

VCC=125V , Ic=6.0A

IB1=1.6A , IB2=-1.6A

Tp=25ã²

1.5 3.0 ã²

0.17 0.4

VCC=15V ,Ic=5A

IB1=1.6A , Vbe(off)=5V

L=0.35mH,Vclamp=300V

0.8 2.0

ã²

0.04 0.1

VCC=15V ,Ic=1A

IB1=0.4A , Vbe(off)=5V

L=0.2mH,Vclamp=300V

Tc=100â

0.8 2.5 ã²

0.05 0.15

Note:

Pulse Test : Pulse width 300, Duty cycle 2%

2/5

Steady, keep you advance

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