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SBP13007-X Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor | |||
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SBP13007-X
High Voltage Fast-Switching NPN Power Transistor
Features
â Very High Switching Speed
â High Voltage Capability
â Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply and inverters motor controls
B
C
E
TO220
Absolute Maximum Ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25â
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
600
400
9.0
12
24
6.0
12
100
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
â
â
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
1.25
40
Units
â/W
â/W
Jan 2008. Rev. 0
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T01-3
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