SBF13009-O Datasheet, PDF(2/5 Page) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

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SBF13009-O Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

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Electrical Characteristics (TC=25â unless otherwise noted)

Symbol

Parameter

Test Conditions

VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0

VCE(sat)

VBE(sat)

IEBO

Ic=5.0A,Ib=1.0A

Ic=8.0A,Ib=1.6A

Collector-Emitter Saturation Voltage Ic=12A,Ib=3.0A

Ic=8.0A,Ib=1.6A

Tc=100â

I Ic=5.0A,Ib=1.0A

Base-Emitter Saturation Voltage

Ic=8.0A,Ib=1.6A

Tc=100â

Emitter-Base Cutoff Current

Veb=9V,Ic=0V

hFE

DC Current Gain

Storage Time

Fall Time

Vce=5V, Ic=5.0A

Vce=5V, Ic=8.0A

VCC=5.0V , Ic=0.5A

(UI9600)

Current Gain Band with Prouct

Vce=10V, Ic=0.5A

SBF13009-O

Value

Units

Min Typ Max

400 -

1.0

1.5 V

3.0

2.0 V

1.2

1.6

1.5 V

10 -

10 uA

ã²

0.8

MHz

Note:

Pulse Test : Pulse width 300, Duty cycle 2%

2/5

Steady, keep you advance

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