SBF13009-O Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

SBF13009-O
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
V_CES
Collector-Emitter Voltage
V_CEO
V_EBO
I_C
I_CP
I_B
I_BM
P_C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
T_J
Operation Junction Temperature
T_STG
Storage Temperature
Tc: Case temperature (good cooling)
Ta:Ambient temperature (without heat sink)
Test Conditions
V_BE = 0
I_B = 0
I_C = 0
t_P = 5ms
Value
Units
700
V
400
V
9.0
V
12*
A
25
A
6.0
A
12
A
50
W
2.2
-40 ~ 150 ℃
-40 ~ 150 ℃
Thermal Characteristics
Symbol
Parameter
R_θJc
Thermal Resistance Junction to Case
R_θJA
Thermal Resistance Junction to Ambient
Value
2.50
62.5
Units
℃/W
℃/W
Jan 2008. Rev. 0
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