SBF13007-O Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

SBF13007-O
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
VCE(sat)
VBE(sat)
ICBO
IEBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
(Vbe=-1.5V)
Emitter -Base Cutoff Current
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=2.0A
Ic=5.0A,Ib=1.0A
Tc=100℃
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=5.0A,Ib=1.0A
Tc=100℃
Vcb=700V
Vcb=700V, Tc=100℃
Veb=9V
hFE
DC Current Gain
Vce=5V,Ic=2.0A
Vce=5V, Ic=5.0A
Value
Units
Min Typ Max
400 -
-V
1.0
-
- 2.0 V
3.0
-
- 2.5 V
1.2
-
-
V
1.6
-
- 1.5 V
1.0
-
-
mA
5.0
-
- 1.0 mA
10 - 40
5 - 40
fT
Current Gain Bandwidth Product
ton
Tum on Time
ts
Storage Time
tf
Fall Time
VCE = 10V, IC = 0.5A
VCC=125V ,Ic=5A
IB1=IB2=-1.0A
RL=50Ω
4
MHz
-
- 1.6
-
- 3.0 ^㎲
-
- 0.7
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
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