SBF13007-O Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

SBF13007-O
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
◆ Isolation Voltage ( VISO = 4000V AC )
General Description
This device is designed for high voltage, High speed
switching characteristics required such as lighting
system ,switching mode power supply.
B
C
E TO220F
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
700
400
9.0
8.0
16
4.0
8.0
40
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Value
3.13
62.5
Units
℃/W
℃/W
Jan 2008. Rev. 0
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T03-3