D209L Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

D209L
Electrical Characteristics (T_C=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Value
Units
Min Typ Max
V_CEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400 -
-V
V_CE(sat)
V_BE(sat)
I_CBO
h_FE
ts
tf
ts
tf
ts
tf
Collector-Emitter Saturation Voltage
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
0.5
-
- 1.0 V
1.5
Base-Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
Tc=100℃
I Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
-
- 2.0 V
1.2
-
-
V
1.6
-
- 1.5 V
Collector-Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
Vcb=700V, Tc=100℃
1.0
-
-
mA
5.0
DC Current Gain
Resistive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Vce=5V,Ic=5.0A
Vce=5V, Ic=8.0A
V_CC=125V , Ic=6.0A
I_TBp1=₌1₂.₅6_㎲A ,
I_B2=-1.6A
10 - 40
6
-
40
-
1.5 3.0 ㎲
0.16 0.4
V_CC=15V ,Ic=5A
I_B1=1.6A , Vbe(off)=5V
L=0.35mH,V_clamp=300V
- 0.6 2.0 ㎲
- 0.04 0.1
V_CC=15V ,Ic=1A
I_B1=0.4A , Vbe(off)=5V
L=0.2mH,Vclamp=300V
- 0.8 2.5 ㎲
Tc=100℃ ^{- 0.05 0.15}
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
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