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D209L Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor | |||
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D209L
High Voltage Fast-Switching NPN Power Transistor
Features
â Very High Switching Speed
â High Voltage Capability
â Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25â
Total Dissipation at Ta= 25â
Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
700
400
9.0
12
25
6.0
12
130
2.3
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
â
â
Value
0.96
40
Units
â /W
â /W
Jan 2009. Rev. 0
1/5
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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