BAS85 Datasheet, PDF (4/4 Pages) NXP Semiconductors – Schottky barrier diode

RoHS
BAS85
Electrical Characteristics
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Parameter
Reverse breakdown voltage
Leakage current
Forward voltage
Pulse test tp<300 s, <2%
Capacitance
Reverse recovery time
Symbol
V_(BR)R
I_R
V_F
C_tot
t_rr
Test Conditions
I_R=10 A (pulsed)
V_R=25V
I_F=0.1mA
I_F=1mA
I_F=10mA
I_F=30mA
I_F=100mA
V_R=1V, f=1MHz
I_F=10mA to I_R=10mA
to I_R =0.1mA I_R
Min Typ Max Unit
30 -
-
V
-
-
2
A
-
- 0.24 V
-
- 0.32 V
-
- 0.4 V
- 0.5 -
V
-
- 0.8 V
-
- 10 pF
-
-
5 ns
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