BAS85 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier diode

RoHS
BAS85
Schottky Barrier Diode _{TD Features}
.,L ^{1. High reliability}
2. Very low forward voltage
3. Small surface mounting type
CO _Applications
Applications where a very low forward voltage
IC _{is required}
ON _{Absolute Maximum Ratings}
R _Tj=25
Parameter
T _{Continuous reverse voltage}
Forward continuous current
C _{Peak forward current}
Surge forward current
E _{Power dissipation}
L _{Maximum junction temperature}
Ambient operating temperature range
E _{Storage temperature range}
Test Conditions
T_amb=25
T_amb=25
t_p 1 s, T_amb=25
T_amb=65
Symbol
V_R
I_F
I_FM
I_FSM
P_tot
T_j
T_A
T_stg
Value
30
200
300
600
200
125
-65~+125
-65~+150
J _{Maximum Thermal Resistance}
ETj=25
Parameter
WJunction ambient
Test Conditions
on PC board 50mm 50mm 1.6mm
Symbol
R_thJA
Value
250
Unit
V
mA
mA
mA
mW
Unit
K/W
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