W29C512A Datasheet, PDF (9/20 Pages) Winbond – 64 K x 8 CMOS FLASH MEMORY

W29C512A
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to Vss Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except A9
Transient Voltage (< 20 nS ) on Any Pin to Ground Potential
Voltage on A9 and #OE Pin to Ground Potential
RATING
-0.5 to +7.0
0 to +70
-65 to +150
-0.5 to VDD +1.0
-1.0 to VDD +1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 5.0V ± 5%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Power Supply
Current
ICC #CE = #OE = VIL, #WE = VIH, all I/Os open -
-
50 mA
Address inputs = VIL/VIH, at f = 5 MHz
Standby VDD
ISB1 #CE = VIH, all I/Os open
- 2 3 mA
Current (TTL Input)
Other inputs = VIL/VIH
Standby VDD
Current (CMOS
Input)
ISB2 #CE = VDD -0.3V, all I/Os open
Other inputs = VDD -0.3V /Vss
- 20 100 µA
Input Leakage
Current
ILI VIN = Vss to VDD
- - 10 µA
Output Leakage
Current
ILO VIN = Vss to VDD
- - 10 µA
Input Low Voltage VIL
Input High Voltage VIH
-
- - 0.8 V
-
2.0 -
-
V
Output Low Voltage VOL IOL = 2.1 mA
Output High Voltage VOH1 IOH = -0.4 mA
- - 0.45 V
2.4 -
-
V
Output High Voltage VOH2 IOH = -100 µA; VDD = 4.5V
CMOS
4.2 -
-
V
Publication Release Date: February 5, 2002
-9-
Revision A2