W25Q32FVTBIG-TR Datasheet, PDF (86/99 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q32FV
AC Electrical Characteristics (cont’d)
DESCRIPTION
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without ID Read
/CS High to Standby Mode with ID Read
/CS High to next Instruction after Suspend
/CS High to next Instruction after Reset
/RESET pin Low period to reset the device
Write Status Register Time
Byte Program Time (First Byte)
Additional Byte Program Time (After First Byte)
Page Program Time
SYMBOL
tHHQX⁽²⁾
tHLQZ⁽²⁾
tWHSL⁽³⁾
tSHWL⁽³⁾
tDP⁽²⁾
tRES1⁽²⁾
tRES2⁽²⁾
tSUS⁽²⁾
tSUS⁽²⁾
tRST⁽²⁾⁽⁵⁾
tW
tBP1(4)
tBP2(4)
tPP
ALT
tLZ
tHZ
MIN
20
100
1
SPEC
TYP
MAX
7
12
3
3
1.8
20
30
10
15
30
50
2.5
12
0.7
3
UNIT
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
ms
µs
µs
ms
W25Q32FVxxIG
Sector Erase Time (4KB)
tSE
W25Q32FVxxIQ
W25Q32FVxxIF
Block Erase Time (32KB)
tBE1
100
400
ms
45
120
1,600
ms
Block Erase Time (64KB)
tBE2
150
2,000
ms
Chip Erase Time
tCE
10
50
s
Notes:
1.Clock high + Clock low must be less than or equal to 1/fC.
2.Value guaranteed by design and/or characterization, not 100% tested in production.
3.Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4.For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number
of bytes programmed.
5.It’s possible to reset the device with shorter tRESET (as short as a few hundred ns), a 1us minimum is recommended to ensure
reliable operation.
6.4-bytes address alignment for QPI/Quad Read
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