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W25Q32FVTBIG-TR Datasheet, PDF (81/99 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
W25Q32FV
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings (1)(2)
PARAMETERS
SYMBOL CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to 4.6
V
Voltage Applied to Any Pin
VIO
Relative to Ground –0.6 to VCC+0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD (3)
See Note (3)
°C
Electrostatic Discharge Voltage VESD(2)
Human Body Model –2000 to +2000
V
Notes:
1.This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not
guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings
may cause permanent damage.
2.JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
3.Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on
restrictions on hazardous substances (RoHS) 2002/95/EU.
9.2 Operating Ranges
PARAMETER
SYMBOL CONDITIONS
SPEC
MIN MAX
UNIT
Supply Voltage
VCC(1) FR = 104MHz, fR = 50MHz
2.7
3.6
V
Ambient Temperature,
Operating
TA
Industrial
–40 +85
°C
Note:
1.VCC voltage during Read can operate across the min and max range but should not exceed ±10% of the programming
(erase/write) voltage.
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Publication Release Date: June 03, 2016
Revision J