W55RFS27T1B Datasheet, PDF (7/17 Pages) Winbond – SUPER-REGENERATION RF TRANSMITTER

W55RFS27T1B
3. ELECTRONIC CHARACTERISTICS
3.1 W55RFS27T1B Absolute Maximum Ratings
PARAMETER
Supply Voltage to Ground Potential
Applied Input/Output Voltage
Power Dissipation (T_a = 70°C)
Ambient Operating Temperature
Storage Temperature
RATING
- 0.3 to 6.5
- 0.3 to 6.5
150
0 to 70
-40 to 85
UNIT
V
V
mW
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of
the device.
3.2 W55RFS27T1B DC Characteristics
(VDD-VSS = 3 V, Ta = 25°C; unless otherwise specified)
PARAMETER
SYM.
CONDITIONS
MIN.
Power Supply
Operating Voltage
V_DD
2.2
Operating Current (uC-mode)
I_TX
Continuous emission
-
Stand-by Current
I_SBY
-
Digital Input/Output Pin (S1, S2, S3, S4, ID0, ID1, MODE,CKSEL0,CKSEL1)
Input High Voltage
V_IH
0.8*V_D
D
TYP.
-
-
-
-
Input Low Voltage
V_IL
V_SS
-
Input Pin Pull-high Resistance R_PH
S1~S4, RESET
-
150K
TXOUT Output High Source
Current
I_OH
VOH=0.7 * V_DD
6
-
TXOUT Output Low Sink
Current
I_OL
VOL=0.3 * V_DD
6
-
Crystal Oscillator
Operation Frequency
F_XTL
27
-
Oscillator Turn-On Time
T_OSC
Fundamental type
-
-
Over-tone type
-
-
Transmitter Section
Modulation Duty Cycle
Transmission Data Rate
M_DYT
30
R_DTT
50% Duty-cycle, Manchester
Code
-
50
1.25
Transmission Power
P_ANT
-
15
Notes: (1). Crystal turn-on time depends on crystal type: fundamental or overtone type crystal.
(2). Transmitter settling time depends on crystal type: fundamental or overtone type crystal.
MAX. UNIT
5.5
V
50
mA
1
µA
V_DD
V
0.1*V_D
D
-
V
Ohm
-
mA
-
mA
49 MHz
1.0
mS
3.0
mS
70
%
10 Kbps
-
dBm
Publication Release Date:May 24, 2005
-7-
Revision A3