English
Language : 

W27E520 Datasheet, PDF (7/16 Pages) Winbond – 64K X 8 ELECTRICALLY ERASABLE EPROM
W27E520
DC PROGRAMMING CHARACTERISTICS
(VDD = 6.5V ±0.25V, TA = 25° C ±5° C)
PARAMETER
SYM.
CONDITIONS
Input Load Current
VDD Program Current
VPP Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage (Verify)
Output High Voltage (Verify)
A9 Silicon I.D. Voltage
VPP Program Voltage
VDD Supply Voltage (Program)
ILI
ICP
IPP
VIL
VIH
VOL
VOH
VHH
VPP
VDP
VIN = VIL or VIH
ALE = VIH,
OE /VPP = VPP
ALE = VIH,
OE /VPP = VPP
-
-
IOL = 2.1 mA
IOH = -0.4 mA
VDD = 5V ±10%
-
-
MIN.
-10
-
LIMITS
TYP.
-
-
MAX.
10
30
UNIT
µA
mA
-
-
30
mA
-0.3
-
0.8
V
2.4
-
VDD+0.5
V
-
-
0.45
V
2.4
-
-
V
11.5 12.0 12.5
V
12.75 13.0 13.25
V
6.25 6.5
6.75
V
AC PROGRAMMING/ERASE CHARACTERISTICS
(VDD = 6.5V ±0.25V, TA = 25° C ±5° C)
PARAMETER
SYM.
LIMITS
MIN. TYP.
OE /VPP Pulse Rise Time
Address Latch Enable Width
ALE Program Pulse Width
TPRT
50
-
TALE
500
-
TPPW
47.5
50
ALE Erase Pulse Width
ALE Erase Pulse Width 1
TEPW
95
100
TEPW1
47.5
50
ALE Erase Pulse Width 2
Latched Address Setup Time
Latched Address Hold Time
Address Setup Time
TEPW2
95
100
TLAS
100
-
TLAH
100
-
TAS
2.0
-
Address Hold Time
OE /VPP Setup Time
OE /VPP Hold Time
Data Setup Time
TAH
0
-
TOES
2.0
-
TOEH
2.0
-
TDS
2.0
-
Data H old Time
TDH
2.0
-
Data Valid from OE /VPP Low during Erase Verify
Data Valid from OE /VPP Low during Program Verify
OE /VPP High to Output High Z
OE /VPP High Voltage Delay After ALE Low
OE /VPP Recovery Time
TEOE
-
-
TPOE
-
-
TDFP
0
-
TVS
2.0
-
TVR
2.0
-
Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
MAX.
-
-
52.5
105
52.5
105
-
-
-
-
-
-
-
-
150
150
130
-
-
UNIT
nS
nS
µS
mS
µS
mS
nS
nS
µS
µS
µS
µS
µS
µS
nS
nS
nS
µS
µS
Publication Release Date: September 2000
-7-
Revision A2