W24L01 Datasheet, PDF (7/11 Pages) Winbond – 128K X 8 CMOS STATIC RAM

W24L01
DATA RETENTION CHARACTERISTICS
(TA (°C) = 0 to 70 for LL, -20 to 85 for LE; -40 to 85 for LI)
PARAMETER
SYM.
TEST CONDITIONS
VDD for Data Retention
VDR ^{CS1 ≥ VDD -0.2V}
or CS2 ≤ 0.2V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
IDDDR ^{CS1 ≥ VDD -0.2V}
or CS2 ≤ 0.2V, VDD = 3V
TCDR See data retention waveform
TR
* Read Cycle Time
MIN. TYP. MAX. UNIT
1.5 -
-
V
-
-
0
-
TRC* -
5 µA
-
nS
-
nS
DATA RETENTION WAVEFORM
VDD
CS1
CS2
0.9 x VDD
TCDR
VDR _=> 1.5V
CS1 ^>= VDD - 0.2V
0.9 x VDD
TR
0V ^<= CS2 ^<= 0.2V
V
Publication Release Date: January 2, 2002
-7-
Revision A6