W24256 Datasheet, PDF (7/10 Pages) Winbond – 32K X 8 CMOS STATIC RAM

Preliminary W24256
DATA RETENTION CHARACTERISTICS
(TA = 0° C to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
VDD for Data Retention
VDR _{CS ≥ VDD -0.2V}
Data Retention Current
IDDDR _{CS ≥ VDD -0.2V, VDD = 3V}
Chip Deselect to Data
Retention Time
TCDR See data retention waveform
Operation Recovery Time TR
* Read Cycle Time
MIN.
2.0
-
0
TRC*
TYP.
-
-
-
-
MAX. UNIT
5.5 V
20 µA
-
nS
-
nS
DATA RETENTION WAVEFORM
VDD
0.9 VDD
TCDR
VDR _=> 2V
0.9VDD
TR
CS
VIH
CS ^>= VDD - 0.2V
VIH
ORDERING INFORMATION
PART NO.
W24256-70L
W24256-70LL
W24256S-70L
W24256S-70LL
W24256Q-70L
W24256Q-70LL
ACCESS
TIME
(nS)
70
70
70
70
70
70
OPERATING
CURRENT MAX.
(mA)
60
60
60
60
60
60
STANDBY
CURRENT MAX.
(µA)
100
50
100
50
100
50
PACKAGE
600 mil DIP
600 mil DIP
330 mil SOP
330 mil SOP
Standard type one TSOP
Standard type one TSOP
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
Publication Release Date: October 1999
-7-
Revision A1