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| W25Q40BV Datasheet, PDF (60/73 Pages) Winbond – 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |||
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W25Q40BV
9. ELECTRICAL CHARACTERISTICS(1)
9.1 Absolute Maximum Ratings (2)
PARAMETERS
Supply Voltage
SYMBOL
VCC
Voltage Applied to Any Pin
Transient Voltage on any Pin
VIO
VIOT
Storage Temperature
Lead Temperature
Electrostatic Discharge Voltage
TSTG
TLEAD
VESD
CONDITIONS
Relative to Ground
<20nS Transient
Relative to Ground
Human Body Model(4)
RANGE
â0.6 to +4.0
â0.6 to VCC+0.4
â2.0V to VCC+2.0V
â65 to +150
See Note (3)
â2000 to +2000
UNIT
V
V
V
°C
°C
V
Notes:
1. Specification for W25Q40BV is preliminary. See preliminary designation at the end of this document.
2. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
3. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and
the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
4. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
9.2 Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
Supply Voltage(1)
Ambient
Temperature,
Operating
VCC
TA
FR = 80MHz, fR = 50MHz
FR = 104MHz, fR = 50MHz
Industrial
SPEC
MIN
MAX
2.7
3.6
3.0
3.6
â40
+85
UNIT
V
°C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.
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