W29GL128C Datasheet, PDF (38/64 Pages) Winbond – 128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL128C
8.5 AC Characteristics
Description
Valid Data Output after Address
EVIO=VCC
EVIO=1.65V to VCC
Page Access Time
EVIO=VCC
EVIO=1.65V to VCC
Valid data output after #CE low
EVIO=VCC
EVIO=1.65V to VCC
Valid data output after #OE low
EVIO=VCC
EVIO=1.65V to VCC
Read Period Time
EVIO=VCC
EVIO=1.65V to VCC
Data Output High Impedance after #OE high
Data Output High Impedance after #CE high
Output Hold Time from the earliest rising edge of
address, #CE, #OE
Write Period Time
Command write period time
Address Setup Time
Address Setup Time to #OE low during Toggle Bit
Polling
Address Hold Time
Address Hold Time from #CE or #OE High during
Toggle Bit Polling
Data Setup Time
Data Hold Time
VCC Setup Time
Chip enable Setup Time
Chip enable Hold Time
Output enable Setup Time
Read
Output enable Hold Time
Toggle & Data#
Polling
#WE Setup Time
#WE Hold Time
#CE Pulse Width
#CE Pulse With High
#WE Pulse Width
#WE Pulse Width High
Program/Erase active time by
EVIO=VCC
RY/#BY
EVIO=1.65V to VCC
Read Recover Time before Write (#OE High to #WE
Low)
Read Recover Time before Write (#OE High to #CE
Low)
32-Word Write Buffer Program Operation
Effective Write Buffer Program
Operation
Word
Accelerated Effective Write Buffer
Operation
Per Word
Symbol
ALT STD
tACC
tAA
tPACC
tPA
tCE
tOE
tRC
tDF
tDF
tOH
tWC
tCWC
tAS
tASO
tAH
tAHT
tDS
tDH
tVCS
tCS
tCH
tOES
tOEH
tCP
tCPH
tWS
tWH
tCEPW
tCEPWH
tWP
tWPH
tBUSY
tGHWL
tGHEL
tWHWH1
tWHWH1
tWHWH1
VCC=2.7V~3.6V
Min Typ Max Units
90 ns
100 ns
25 ns
35 ns
90 ns
100 ns
25 ns
35 ns
90
ns
100
ns
20 ns
20 ns
0
ns
90
ns
90
ns
0
ns
15
ns
45
ns
0
ns
30
ns
0
ns
35
µs
0
ns
0
ns
0
ns
0
ns
10
ns
0
ns
0
ns
35
ns
30
ns
35
ns
30
ns
90 ns
100 ns
0
ns
0
ns
192
µs
6
µs
4.8
µs
32